Abstract: Heavy-ion induced latent gate damage (LGD) and single-event leakage current (SELC) related to gate damage in silicon carbide (SiC) power MOSFETs were investigated by experiment and ...
Abstract: We have demonstrated performance enhancement of polycrystalline InOx FET by Ga-doping in ALD process & anneal with mobility of $81 ~\text{cm}^{2}/\text{Vs ...
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