Abstract: The gate-all-around nanosheet (NS) field effect transistors (FETs) are hailed as the most promising candidate for scaling the CMOS technology beyond the 5-nm technology node owing to their ...
Department of Materials, The University of Manchester, Oxford Road, M13 9PL Manchester, U.K. National Graphene Institute, The University of Manchester, Oxford Road, M13 9PL Manchester, U.K. Department ...
Abstract: Despite extensive research over the past two decades, achieving simultaneous high energy and power density in supercapacitors (SCs) remains a challenge. The key lies in designing nanoporous ...
School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India ...
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